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RJK5003DPD
Silicon N Channel Power MOS FET High Speed Power Switching Use
REJ03G0580-0200 Rev.2.00 Mar 14, 2006
Features
* * * * VDSS : 500 V RDS(on) : 1.5 (MAX.) ID : 5 A Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain 2, 4
1 12 3
3
Applications
* Lighting ballast, SMPS, etc.
Maximum Ratings
(Tc = 25C)
Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (pulse)Note1 IAP Pch Tch Tstg ch-c Ratings 500 30 5 20 5 62.5 150 -55 to +150 2.0 Unit V V A A A W C C C/W Channel to case Conditions VGS = 0 V VDS = 0 V
L = 200 H
1. Pulse width limited by safe operating area.
Rev.2.00,
Mar 14, 2006,
page 1 of 6
RJK5003DPD
Electrical Characteristics
(Tch = 25C)
Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: 2. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.5 1.3 550 60 10 20 20 60 25 1.0 Max. -- 1 0.1 4.0 1.5 -- -- -- -- -- -- -- 1.5 Unit V mA A V pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V VDS = 500 V, VGS = 0 V VGS = 25 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID= 2 A, VGS = 10 VNote2 VDS = 25 V, VGS= 0 V, f = 1 MHz VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 IF = 2 A, VGS = 0 V Note2
Rev.2.00,
Mar 14, 2006,
page 2 of 6
RJK5003DPD
Performance Curves
Power vs. Temperature Derating
70 100
PW =
Maximum Safe Operating Area
Channel Dissipation Pch (W)
60
Drain Current ID (A)
50 40 30 20 10 0
10
10 0 s
10
s
1
DC
0.1
Operation in this area is limited by RDS(on) Tc = 25C Single pulse
0
50
100
150
200
0.01 1
10
100
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 Tc = 25C Pulse Test VGS = 20 V 10 V 5
Typical Output Characteristics
VGS = 20 V 10 V
7V 5V 6V
Drain Current ID (A)
PDS = 62.5 W 6V
6
Drain Current ID (A)
8
7V
4
5V
3 Tc = 25C Pulse Test 2
4
2 4V 0 0 4 8 12 16 20
1 4V 0 0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical)
Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) ()
20 Tc = 25C Pulse Test 16 ID = 8 A 12
Static Drain to Source on State Resistance vs. Drain Current (Typical)
4 Tc = 25C Pulse Test 3.2 2.4 VGS = 10 V 1.6 0.8 20 V
8
5A 3A
4
0 0 4 8 12 16 20
0 10-1
100
101
102
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00,
Mar 14, 2006,
page 3 of 6
RJK5003DPD
Capacitance vs. Drain to Source Voltage (Typical)
103 Ciss
Transfer Characteristics (Typical)
10 Tc = 25C VDS = 10 V 8 Pulse Test
Drain Current ID (A)
Capacitance (pF)
102
6
4
Coss 101 Tch = 25C f = 1 MHz VGS = 0 V 0 10 100 101 Crss
2 0
0
2
4
6
8
10
102
103
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V) Gate to Source Voltage vs. Gate Charge (Typical)
Switching Characteristics (Typical)
Tch = 25C VDD = 200 V VGS = 10 V RG = 25 Pulse Test
Gate to Source Voltage VGS (V)
103 7 5
16 Tch = 25C ID = 5 A 12 VDS = 100 V
Switching Time (ns)
3 2 102 7 5 3 2 101 0 10 td(on)
200 V 8 400 V
td(off) tf
4
tr 2 3 5 7 101
0 0 4 8 12 16 20 24
Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical)
10 VGS = 0 V Pulse Test Ta = 25C
Gate Charge Qg (nC)
Drain to Source Breakdown Voltage V(BR)DSS (tC) Drain to Source Breakdown Voltage V(BR)DSS (25C)
Breakdown Voltage vs. Channel Temperature (Typical)
1.4 VGS = 0 V ID = 1 mA 1.2
Source Current IDR (A)
8
6
1.0
4
0.8
2 0 0 0.4 0.8 1.2 1.6 2
0.6
0.4 -75
-25
25
75
125
175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
Rev.2.00,
Mar 14, 2006,
page 4 of 6
RJK5003DPD
Static Drain to Source on State Resistance vs. Channel Temperature (Typical)
101 VGS = 10 V 7 ID = 2 A 5 Pulse Test
4 3 2
Drain to Source on State Resistance RDS(on) (25C)
Drain to Source on State Resistance RDS(on) (tC)
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Channel Temperature (Typical)
5.0 VDS = 10 V ID = 1 mA 4.0
3.0
10
0
7 5 4 3 2
2.0
1.0
10-1
-75 -25 25 75 125 175
0 -75
-25
25
75
125
175
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Transient Thermal Impedance th(ch-c) (C/W)
Transient Thermal Impedance vs. Pulse Width
101
7 5 3 2
D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse
PDM PW T D= PW T
100
7 5 3 2
10-1
10-4 2 3 5710-3 2 3 5 710-2 2 3 5 7 10-12 3 5 7100 2 3 5 7 101
Pulse Width PW (s)
Switching Time Measurement Circuit
Switching Waveform
Vin Monitor RG D.U.T. RL
Vout Monitor Vin Vout VDD 10% 10%
90%
10%
90% td(on) tr
90% td(off) tf
Rev.2.00,
Mar 14, 2006,
page 5 of 6
RJK5003DPD
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZA-A Previous Code MASS[Typ.] 0.32g
Unit: mm
1 0.2
6.6 5.3 0.2
2.3 0.5 0.2
6.1 0.2
10.4Max
0.1 0.1
1Max
2.5Min
0.76 0.2
0.76
0.5 0.2 2.3 0.2
2.3
Order Code
Lead form Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name - 00 - direction (J or Q) - 2 Standard order code example RJK5003DPD-00-J2
Note: It is the case of a standard. In addition, please confirm the packing specification for every product about the contents of packing.
Rev.2.00,
Mar 14, 2006,
page 6 of 6
1
1.4 0.2
Sales Strategic Planning Div.
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